政府計畫（GRB），建議「依年度遞減排序」，以查看最新的研究方向。
| 畢業學年度 | 論文標題 | 連結 | 學位 | 畢業時長(年) |
|---|---|---|---|---|
| 關鍵字 | 口試日期 | |||
| 114 | 基於時間多... 基於時間多工之砷化銦鎵/砷化銦鋁單光子雪崩二極體進行光子數解析並結合FPGA實現量子亂數產生器 (Photon-Number-Resolving InGaAs/InAlAs Single-Photon Avalanche Diode Based on Time-Division Multiplexing and Its Implementation in an FPGA-Based Quantum Random Number Generator) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 商用砷化銦... 商用砷化銦鎵/磷化銦單光子雪崩二極體之操作模式、量測條件與焊接/打線順序影響 (Impact of Operation Mode, Measurement Conditions, and Welding/Wire-Bonding Sequence on Commercial InGaAs/InP Single-Photon Avalanche Diodes) | NTHU NDLTD | 碩 | 2.49 |
. .... | 2026-01-26 | |||
| 114 | AC-LG... AC-LGAD之TCAD設計模擬、製程開發與元件失效原因探討 (AC-LGAD Development: From TCAD-Based Design, Simulation, Fabrication to Failure Investigation) | NTHU NDLTD | 碩 | 2.49 |
. .... | 2026-01-26 | |||
| 114 | 砷化銦鎵/... 砷化銦鎵/砷銻化鋁鎵單光子雪崩二極體之設計、模擬與電性初探 (Design, simulation, and preliminary electrical evaluation of InGaAs/AlGaAsSb single-photon avalanche diodes) | NTHU NDLTD | 碩 | 3.15 |
單光子雪崩二極體 (Single-Photon Avalanche Diode(SPAD))、砷銻化鋁鎵放大層 (AlGaAsSb Multiplication Layer)、側壁缺陷(Sidewall Defect) 單光子雪崩... | 2025-09-24 | |||
| 113 | 應用於近紅... 應用於近紅外光偵測之砷化銦鎵/銻化鋁鎵砷單光子雪崩二極體結構模擬與實作分析 (Simulation and Fabrication Analysis of InGaAs/AlGaAsSb Single Photon Avalanche Diodes for Near Infrared Photodetection Applications) | NTHU NDLTD | 碩 | 2.99 |
. .... | 2025-07-25 | |||