政府計畫（GRB），建議「依年度遞減排序」，以查看最新的研究方向。
| 畢業學年度 | 論文標題 | 連結 | 學位 | 畢業時長(years) |
|---|---|---|---|---|
| 關鍵字 | ||||
| 114 | 基於28n... 基於28nm邏輯製程相容電阻式記憶體之讀取區間及高壓寫入電路優化設計 (Design of High-Voltage Programming Circuit and Read Window for 28 nm Logic-Compatible Resistive Memory Optimization) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 實現單一 ... 實現單一 WSe₂ 鐵電電晶體之多位元內容可定址記憶體於高速搜尋應用 (Development of 1T-WSe₂ FeFET for Multibit Content-Addressable Memory for High-Speed Searching Applications) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | BEOL相... BEOL相容 2D/Si-SOI之單體三維異質積體化技術實現SRAM/eDRAM-互補邏輯晶片 (BEOL-Compatible 2D/Si-SOI Monolithic-3D Hetero-Integration for On-Chip SRAM/eDRAM in Complementary Logic) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | AutoR... AutoRW-Phys：物理啟發式區域加權緊湊模型—實現快速SPICE參數萃取之阻記憶元件電路模擬 (AutoRW-Phys: A Physics-Inspired Region-Weighted Model for Fast Parameter Extraction towards SPICE-Compatible RRAM Simulation) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 二硫化鉬場... 二硫化鉬場效電晶體之接觸工程與元件老化可靠度特性分析 (Contact Engineering and Reliability Characterization of MoS2 Field-Effect Transistors for Device Aging Analysis) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 低維度二硒... 低維度二硒化鎢（WSe2）半導體：磊晶生長、缺陷形成與摻雜工程 (Low-Dimensional WSe2 Semiconductor: Fundamentals of Epitaxy, Defect Formation, and Doping Engineering) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 以混合氧化... 以混合氧化物堆疊結構設計1T1R記憶體核心之高能效多位元編程技術 (Hybrid-Oxide-Stack Engineered 1T1R Memory Cores for Energy-Efficient Multibits Programming) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 基於化學氣... 基於化學氣相沉積二維連續薄膜二硒化鎢與二硫化鉬整合大規模P型與N型高性能上閘極場效應電晶體陣列 (Large-Scale High-Performance P- and N-Type Top-Gate FET Arrays Based on CVD-Grown 2D WSe2 and MoS2 Films) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | 暫存器最佳... 暫存器最佳化：數位電路最佳化之個案研究 (Optimization of Registers: A Case Study of Digital Circuit Optimization) | NTHU | 碩 | 無口試日期 |
電晶體尺寸設計 (Transistor sizing)、P/N寬度比值最佳化 (P/N ratio optimization)、比例式設計方法 (Ratioed design)、數位電路 (Digital circuits)、傳遞延遲 (Propagation delay)、設定時間(Setup time) 電晶體尺寸... | ||||
| 114 | 雙閘極二維... 雙閘極二維電晶體緊湊模型與物理解析之全域操作區 I–V 特性驗證 (Physics-Driven Compact Modeling for Dual-gated 2D Transistors with Full-Range I-V Validation) | NTHU | 碩 | 無學號 |
. .... | ||||
| 114 | CMOS ... CMOS 相容之室溫固相取代摻雜技術於 p 型二硒化鎢電晶體接觸工程之應用 (Room-Temperature Solid-Phase Substitutional Doping for CMOS Compatible Contact Engineering in WSe2 pFETs) | NTHU | 碩 | 無學號 |
. .... | ||||
| 113 | 透過金屬預... 透過金屬預鍍層開發P型WSe₂實現無轉移FET製程 (The Development of P-Type WSe₂ Enabled by Metal Pre-seeding Layer for Transfer-free FET Process) | NTHU | 碩 | 無學號 |
. .... | ||||
| 113 | 結合氧化鋁... 結合氧化鋁表面電荷轉移摻雜與半金屬鉍接觸對二硫化鉬電晶體電流注入機制之影響 (Effects of Alumina-Induced Surface Charge Transfer Doping and Semimetal Bismuth Contacts on Current Injection in MoS₂ Field-Effect Transistors) | NTHU NDLTD | 碩 | 無學號 |
. .... | ||||
| 113 | 基於化學氣... 基於化學氣相沉積法合成可控載子多層二硫化鉬應用於增強型場效電晶體之研究 (Tailoring the Charge Carrier in Multilayer CVD-MoS2 towards E-mode Transistor Applications) | NTHU NDLTD | 碩 | 2.48 |
二硫化鉬(Molybdenum Disulfide)、硫空缺(Sulfur Vacancy)、化學氣相沉積法(Chemical Vapor Deposition)、臨界電壓(Threshold Voltage)、增強式(Enhancement Mode)、場效電晶體(Field-Effect Transistor) 二硫化鉬(... | ||||
| 113 | 以雙閘極結... 以雙閘極結構實現高效能增強型二硫化鉬電晶體及其應用 (High-Performance Enhancement-Mode Molybdenum Disulfide Transistor Enable by Dual-Gate Structure and Its Applications) | NTHU NDLTD | 碩 | 2.48 |
二硫化鉬(Molybdenum Disulfide)、雙閘極(Dual-Gated)、電晶體(Transistor)、增強型(Enhancement-Mode)、高效能(High-Performance)、二維材料(2D-material) 二硫化鉬(... | ||||
| 113 | 基於二維電... 基於二維電子元件之單晶片式三維異質積體電路 (Monolithic 3D Hetero-Integrated Circuits with 2D Electronics) | NTHU NDLTD | 碩 | 2.48 |
單晶片式三維集成(Monolithic 3D Integration)、二維電子元件(2D electronics)、異質整合(Hetero-Integration)、二硫化鉬(molybdenum disulfide) 單晶片式三... | ||||
| 113 | 創新可兼容... 創新可兼容半導體載子摻雜技術用於高性能p型二硒化鎢電晶體 (Revolutionary CMOS-Compatible doping technology towards high-performance WSe2 p-FETs) | NTHU NDLTD | 碩 | 2.48 |
二硒化鎢(WSe2)、二硒化釩(VSe2)、過渡金屬二硫化物(Transition Metal Dichalcogenide)、脈衝雷射沉積(Pulse Laser Deposition)、固體摻雜(Solid-state doping) 二硒化鎢(... | ||||
| 113 | 基於複雜氧... 基於複雜氧化物開發之高速多位元阻式記憶體應用於記憶體內計算技術 (Development of High-Speed & Multi-bit RRAM cells Enabled by Complex Oxides towards Compute-in-Memory Technology) | NTHU NDLTD | 碩 | 2.44 |
阻式記憶體(Resistive Random Access Memory)、記憶體內計算(In-memory computing)、複雜氧化物(Complex Oxides)、多位元(Multi-Bit)、單極性阻式記憶體(Unipolar RRAM) 阻式記憶體... | ||||
| 113 | 基於先驗幾... 基於先驗幾何與殘差優化的自適應神經輻射場架構開發 (Development of Adaptive Neural Radiance Fields Architecture Based on Prior Geometry and Residual Optimization) | NTHU NDLTD | 碩 | 2.24 |
神經輻射場(Neural Radiance Fields)、三維場景重建(3D Scene Reconstruction)、運動回復結構(Structure-from-Motion)、稀疏點雲(Sparse Point Cloud) 神經輻射場... | ||||
| 112 | 基於頂閘極... 基於頂閘極二維材料電晶體物理建模驗證應用於電流電壓之特性分析 (Physics-Based Modeling and Validation of Top-Gated 2D FETs for Analytical Current-Voltage Characteristics) | NTHU NDLTD | 碩 | 1.98 |
二維材料(2D materials)、物理模型(physical model)、二硫化鉬(Molybdenum disulfide)、帕松方程(Poisson equation)、飄移擴散方程(drift diffusion equation) 二維材料(... |