政府計畫（GRB），建議「依年度遞減排序」，以查看最新的研究方向。
| 畢業學年度 | 論文標題 | 連結 | 學位 | 畢業時長(years) |
|---|---|---|---|---|
| 關鍵字 | ||||
| 112 | 拓樸絕緣體... 拓樸絕緣體碲化鉍銻/磁性絕緣體銪鐵石異質結構及磁性參雜磁化碲化鉍銻之傳輸特性 (Magnetotransport properties of the magnetic topological insulators: (Bi,Sb)2Te3/EuIG and Cr-doped (Bi,Sb)2Te3) | NTHU NDLTD | 碩 | 4.48 |
拓樸絕緣體(topological insulator)、異常霍爾效應(anomalous Hall effect)、拓樸霍爾效應(topological Hall effect)、弱侷域化效應(weak antilocalization)、磁性拓樸絕緣體(magnetic topological insulator)、鄰近效應(proximity effect) 拓樸絕緣體... | ||||
| 112 | 可調變磁特... 可調變磁特性亞鐵磁絕緣體銪鐵石榴石薄膜之離軸濺鍍生長研究 (Off-axis Sputtering Growth of Ferrimagnetic Insulator Europium Iron Garnet Films with Tunable Magnetic Properties) | NTHU NDLTD | 碩 | 3.36 |
銪鐵石榴石(Europium Iron Garnet)、亞鐵磁絕緣體(Ferrimagnetic Insulator)、離軸濺鍍(Off-axis sputtering)、可調控磁特性(Adjustable magnetic property) 銪鐵石榴石... | ||||
| 111 | 拓撲絕緣體... 拓撲絕緣體碲化鉍銻/磁性絕緣體銪鐵石榴石異質結構上之結構分析與物理特性研究 (Structural and Physical Properties of Topological Insulator (Bi,Sb)2Te3/Magnetic Insulator EuIG Heterostructure) | NTHU NDLTD | 碩 | 3.95 |
磁性絕緣體(topological insulator)、拓撲絕緣體(europium iron garnet)、碲化鉍銻((Bi,Sb)2Te3)、銪鐵石(X-ray diffrraction)、結構分析(X-ray magnetic circular dichroism) 磁性絕緣體... | ||||
| 111 | 上閘極偏壓... 上閘極偏壓於拓樸絕緣體碲化鉍銻/磁性絕緣體銪鐵石異質結構之磁傳輸特性 (Magnetotransport Properties in Top-Gated Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Insulator Europium Iron Garnet Heterostructures) | NTHU NDLTD | 碩 | 2.91 |
拓樸絕緣體(topological insulator)、磁性絕緣體(magnetic insulator)、反常霍爾效應(anomalous Hall effect)、拓樸霍爾效應(topological Hall effect)、斯格明子(skyrmion)、場效應(electric field effect) 拓樸絕緣體... | ||||
| 110 | 阿法相錫薄... 阿法相錫薄膜：分子束磊晶，拓樸能帶結構以及電子輸運探討 (Alpha phase Sn thin films: molecular beam epitaxial growth, topological band structure, and electrical transport) | NTHU NDLTD | 博 | 6.00 |
阿法相錫(Alpha phase tin)、分子束磊晶(Molecular beam epitaxy)、角解析光電子能譜(Angle-resolved photoemission spectroscopy)、物質拓樸相(Topological phases of matter)、狄拉克半金屬(Dirac semimetal)、電子輸運(Electrical transport) 阿法相錫(... | ||||
| 109 | 拓撲絕緣體... 拓撲絕緣體碲化鉍鍗/磁性絕緣體銪鐵石異質結構上之傳輸性質與場效應研究 (Transport Properties and Electrical Field Effect Study of Topological Insulator (Bi,Sb)2Te3/Magnetic Insulator EuIG Heterostructures) | NTHU NDLTD | 碩 | 2.91 |
拓撲絕緣體(topological insulator)、鐵磁絕緣體(magnetic insulator)、反常霍爾效應(anomalous Hall effect)、磁鄰近效應(magnetic proximity effect)、拓撲霍爾效應(topological Hall effect)、拓撲量子材料(topological quantum materials) 拓撲絕緣體... | ||||
| 108 | 使用濺鍍成... 使用濺鍍成長具垂直磁異向性之單晶銪鐵石薄膜於釓鎵石榴石基板 (Sputtering Growth of Single Crystal Europium Iron Garnet Film on Gallium Gadolinium Garnet with Perpendicular Magnetic Anisotropy) | NTHU NDLTD | 碩 | 2.71 |
垂直磁異向性(PMA)、稀土石榴石(Rare earth iron garnet)、薄膜(thinfilm) 垂直磁異向... | ||||
| 108 | 成長於磁性... 成長於磁性絕緣體之拓樸絕緣體硒化鉍及成長於銻化銦之拓樸材料錫薄膜之光電子能譜研究 (Photoemission Study of Topological Insulator Bi2Se3 on Thulium Iron Garnet and Topological Material Strained α-Sn on InSb(001) Films) | NTHU NDLTD | 碩 | 2.08 |
拓樸絕緣體(topological insulator)、異質結構(heterostructure)、能帶結構(band structure)、X光光電子能譜(XPS)、角解析光電子能譜(ARPES) 拓樸絕緣體... | ||||
| 107 | 成長拓樸絕... 成長拓樸絕緣體硒化鉍與碲化鉍銻薄膜使塊體態絕緣及增強與稀土鐵石榴石之介面交換耦合 (Advanced Thin Film Growth of Topological Insulators Bi2Se3 and (Bi,Sb)2Te3 toward Bulk-Insulating Features and Enhanced Interfacial Exchange Coupling on Rare-Earth Iron Garnets) | NTHU NDLTD | 碩 | 1.98 |
拓樸絕緣體(Topological insulator)、稀土鐵石榴石(Rare-earth iron garnet)、異常霍爾效應(Anomalous Hall effect)、分子束磊晶系統(Molecular beam epitaxy)、磁鄰近效應(Magnetic proximity effect)、反射式高能電子繞射振盪(RHEED oscillation) 拓樸絕緣體... | ||||
| 106 | 分子束磊晶... 分子束磊晶成長氧化鉿/砷化鎵之介面及其電性研究 (Interfacial Electrical Properties of MBE-HfO2/GaAs MOS capacitors) | NTHU NDLTD | 碩 | 2.84 |
三五族半導體(lll-V semiconductor)、砷化鎵(GaAs)、氧化鉿(HfO2)、金氧半電容(MOSCAP)、熱穩定性(thermal stability)、介面缺陷密度(Dit) 三五族半導... | ||||
| 106 | 應用於自旋... 應用於自旋電子學的新穎低維量子材料 (Novel Low-D Quantum Materials for Spintronic applications) | NTHU NDLTD | 學逕博 | 6.84 |
拓樸絕緣體(Topological Insulators)、分子束磊晶(Molecular Beam Epitaxy)、角解析電子能譜(Angular resolved photo-emission spectroscopy)、錫烯(Stanene)、阿法錫(Alpha Tin) 拓樸絕緣體... | ||||
| 106 | 拓樸材料α... 拓樸材料α錫的電子傳輸特性及頂閘極對拓樸絕緣體的場效應研究 (Electrical transport property of topological material α-Sn thin films and investigation of electrical field effect of topological insulators via a top gate) | NTHU NDLTD | 碩 | 1.81 |
拓樸絕緣體(topological insulator)、自旋電子學(spintronics)、場效應(electrical field effect)、α錫(α-Sn)、鉍化硒(Bi2Se3) 拓樸絕緣體... | ||||
| 106 | 拓樸絕緣體... 拓樸絕緣體/磁性絕緣體異質結構之傳輸性質 (Transport Properties of Topological Insulator/Magnetic Insulator Heterostructures) | NTHU NDLTD | 碩 | 1.81 |
拓樸絕緣體(Topological insulator)、磁性絕緣體(Magnetic insulator)、鄰近效應(Proximity effect)、弱局域效應(Weak localization effect) 拓樸絕緣體... | ||||
| 106 | 可調變垂直... 可調變垂直磁異向性亞鐵磁絕緣體銩鐵石榴石薄膜的濺鍍成長及磁化翻轉研究 (Sputtering Growth and Magnetization Switching Studies of Ferrimagnetic Insulator Thulium Iron Garnet Films with Tunable Perpendicular Magnetic Anisotropy) | NTHU NDLTD | 碩 | 1.81 |
磁性絕緣體(magnetic insulator)、銩鐵石榴石(thulium iron garnet)、垂直磁異向性(perpendicular magnetic anisotropy)、磁化翻轉(magnetization switching)、濺鍍(sputtering) 磁性絕緣體... | ||||
| 104 | 成長拓樸絕... 成長拓樸絕緣體薄膜於二維材料如石墨烯及單層二硫化鉬 (Growth of Topological Insulator Thin Films on 2D Materials of Graphene and MoS2) | NTHU NDLTD | 碩 | 無口試日期 |
拓樸絕緣體(topological insulator)、薄膜(thin film) 拓樸絕緣體... | ||||
| 103 | 拓樸絕緣體... 拓樸絕緣體薄膜之傳輸性質與場效應研究 (Transport Property and Electrical Field Effect Study of Topological Insulator Thin Films) | NTHU NDLTD | 碩 | 無口試日期 |
拓撲絕緣體(Topological Insulator)、背閘極(back gate) 拓撲絕緣體... | ||||
| 102 | 運用脈衝鐳... 運用脈衝鐳射沉積成長新穎超導薄膜材料(Sr2RuO4, Fe1-xSe) (PLD Growth of Novel Superconducting Thin film (Sr2RuO4, Fe1-xSe)) | NTHU NDLTD | 碩(外籍生) | 無口試日期 |
脈衝鐳射沉積(PLD)、超導(Superconductivity)、薄膜(Thin Film)、鍶釕氧化合物(Ruthenium Oxide Series)、鐵硒(Iron Selenide) 脈衝鐳射沉... | ||||
| 102 | 分子束磊晶... 分子束磊晶成長碲化鉍薄膜之電子結構及其保護層材料研究 (Electronic structure Properties and Protective Capping Layer Studies of MBE-Bi2Te3 Thin Films) | NTHU NDLTD | 碩 | 無口試日期 |
拓樸絕緣體(Topological insulator)、碲化鉍(Bithmus telluride)、角解析光電子能譜(ARPES) 拓樸絕緣體... | ||||
| 102 | Mater... Materials and Physical Properties of Topological Insulator Bi2Te3 Thin Films by Molecular Beam Epitaxy (分子束磊晶成長拓撲絕緣體碲化鉍之材料與物理性研究) | NTHU NDLTD | 碩 | 無口試日期 |
拓撲絕緣體(Topological Insulator)、碲化鉍(Bi2Te3)、分子束磊晶(Molecular Beam Epitaxy)、熱電材料(undefined) 拓撲絕緣體... | ||||
| 101 | 原位原子層... 原位原子層沉積成長氧化鋁/砷化鎵金氧半電容之介面電性與氧化層微縮特性研究 (Interfacial Electrical Properties and Oxide Scaling Characteristics of In-situ ALD-Al2O3 on GaAs MOS Capacitor) | NTHU NDLTD | 碩 | 無口試日期 |
原子層沉積(Atomic layer deposited)、氧化鋁(Al2O3)、高介電係數(high-k)、砷化鎵(GaAs) 原子層沉積... |